Different types of headphone sockets, the degree of damage by static electricity is not the same, the minimum 100V static voltage will cause damage to it. In recent years, with the development of electronic components becoming integrated, the corresponding electrostatic voltage is also decreasing.
The electrostatic voltage induced by the human body is usually over 2-4KV, usually caused by slight movements of the human body or by friction with the insulation. That is to say, if the electrostatic potential in our daily life is in contact with IC, almost all IC will be destroyed. This danger exists in any work environment where ESD protection is not applied. Electrostatic damage to IC is not only reflected in the process of making electronic components, but also damages the IC during the assembly, transportation and other processes of IC.
The signal source is coupled to the amplitude of the test signal on the circuit is different in matching and non matching state, headset socket output amplitude general or no-load output amplitude, either, the magnitude of the output, it can be through the instrument instructions or by measurement to determine the. If the input impedance of the circuit under test than the signal source output impedance is much larger, also with the signal source output impedance matching panel can not through the signal source to determine the coupling to the amplitude of the test signal on the circuit, and to determine the measured by.
In the same type of headphone socket, the higher the operating frequency, the higher the operating current, the shorter the switching time, or the higher the rated voltage, the better the radiation resistance. For example, a microprocessor circuit made of the same materials and technology, circuit 10V power supply circuit of 5V power supply requirements than the anti radiation ability, because the noise 10V power supply 3V and 5V power supply noise tolerance, only 1.5V tolerance.
The headset socket in different types, the anti radiation ability is better than that of the semiconductor diode transistor triode tube, the anti radiation ability is better than bipolar transistor Junction FET, the circuit is composed of discrete components of the anti radiation ability is superior to realize the same function of monolithic integrated circuit, anti neutron radiation ability of digital integrated circuit analog integrated circuit.
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